Techniques for providing a direct injection semiconductor memory device

ABSTRACT

Techniques for providing a direct injection semiconductor memory device are disclosed. In one embodiment, the techniques may be realized as a method for biasing a direct injection semiconductor memory device including the steps of applying a first non-negative voltage potential to a first region via a bit line and applying a second non-negative voltage potential to a second region via a source line. The method may also include applying a third voltage potential to a word line, wherein the word line may be spaced apart from and capacitively to a body region that may be electrically floating and disposed between the first region and the second region. The method may further include applying a fourth positive voltage potential to a third region via a carrier injection line, wherein the third region may be disposed below at least one of the first region, the body region, and the second region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent application is a continuation of U.S. patent application Ser. No. 12/843,212, filed Jul. 26, 2010, which claims priority to U.S. Provisional Patent Application No. 61/228,934, filed Jul. 27, 2009, each of which is hereby incorporated by reference herein in its entirety.

FIELD OF THE DISCLOSURE

The present disclosure relates generally to semiconductor memory devices and, more particularly, to techniques for providing a direct injection semiconductor memory device.

BACKGROUND OF THE DISCLOSURE

The semiconductor industry has experienced technological advances that have permitted increases in density and/or complexity of semiconductor memory devices. Also, the technological advances have allowed decreases in power consumption and package sizes of various types of semiconductor memory devices. There is a continuing trend to employ and/or fabricate advanced semiconductor memory devices using techniques, materials, and devices that improve performance, reduce leakage current, and enhance overall scaling. Silicon-on-insulator (SOI) and bulk substrates are examples of materials that may be used to fabricate such semiconductor memory devices. Such semiconductor memory devices may include, for example, partially depleted (PD) devices, fully depleted (FD) devices, multiple gate devices (for example, double, triple, or surrounding gate), and Fin-FET devices.

A semiconductor memory device may include a memory cell having a memory transistor with an electrically floating body region wherein electrical charges may be stored. When excess majority electrical charge carriers are stored in the electrically floating body region, the memory cell may store a logic high (e.g., binary “1” data state). When the electrical floating body region is depleted of majority electrical charge carriers, the memory cell may store a logic low (e.g., binary “0” data state). Also, a semiconductor memory device may be fabricated on silicon-on-insulator (SOI) substrates or bulk substrates (e.g., enabling body isolation). For example, a semiconductor memory device may be fabricated as a three-dimensional (3-D) device (e.g., multiple gate devices, Fin-FETs, recessed gates and pillars) on a silicon-on-insulator (SOI) or bulk substrates.

In one conventional technique, the memory cell of the semiconductor memory device may be read by applying bias signals to a source/drain region(s) and/or a gate of the memory transistor. As such, a conventional reading technique may involve sensing an amount of current provided/generated by/in the electrically floating body region of the memory cell in response to the application of the source/drain region and/or gate bias signals to determine a data state stored in the memory cell. For example, the memory cell may have two or more different current states corresponding to two or more different logical states (e.g., two different current conditions/states corresponding to two different logic states: a binary “0” data state and a binary “1” data state).

In another conventional technique, the memory cell of the semiconductor memory device may be written to by applying bias signals to the source/drain region(s) and/or the gate of the memory transistor. As such, a conventional writing technique may result in an increase/decrease of majority charge carriers in the electrically floating body region of the memory cell which, in turn, may determine the data state of the memory cell. An increase of majority charge carriers in the electrically floating body region may result from impact ionization, band-to-band tunneling (gate-induced drain leakage “GIDL”), or direct injection. A decrease of majority charge carriers in the electrically floating body region may result from charge carriers being removed via drain region charge carrier removal, source region charge carrier removal, or drain and source region charge carrier removal, for example, using back gate pulsing.

Often, conventional reading and/or writing operations may lead to relatively large power consumption and large voltage potential swings which may cause disturbance to unselected memory cells in the semiconductor memory device. Also, pulsing between positive and negative gate biases during read and write operations may reduce a net quantity of majority charge carriers in the electrically floating body region of the memory cell in the semiconductor memory device, which, in turn, may result in an inaccurate determination of the state of the memory cell. Furthermore, in the event that a bias is applied to the gate of the memory transistor that is below a threshold voltage potential of the memory transistor, a channel of minority charge carriers beneath the gate may be eliminated. However, some of the minority charge carriers may remain “trapped” in interface defects. Some of the trapped minority charge carriers may recombine with majority charge carriers, which may be attracted to the gate as a result of the applied bias. As a result, the net quantity of majority charge carriers in the electrically floating body region may be reduced. This phenomenon, which is typically characterized as charge pumping, is problematic because the net quantity of majority charge carriers may be reduced in the electrically floating body region of the memory cell, which, in turn, may result in an inaccurate determination of the state of the memory cell.

In view of the foregoing, it may be understood that there may be significant problems and shortcomings associated with conventional techniques for fabricating and/or operating semiconductor memory devices.

SUMMARY OF THE DISCLOSURE

Techniques for providing a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for biasing a direct injection semiconductor memory device comprising the steps of applying a first non-negative voltage potential to a first region via a bit line and applying a second non-negative voltage potential to a second region via a source line. The method may also comprise applying a third voltage potential to a word line, wherein the word line may be spaced apart from and capacitively to a body region that may be electrically floating and disposed between the first region and the second region. The method may further comprise applying a fourth positive voltage potential to a third region via a carrier injection line, wherein the third region may be disposed below at least one of the first region, the body region, and the second region.

In accordance with other aspects of the particular exemplary embodiment, the method may further comprise increasing the third voltage potential applied to the word line from the third voltage potential applied to the word line during a hold operation to perform a read operation.

In accordance with further aspects of this particular exemplary embodiment, the method may further comprise increasing the second non-negative voltage potential applied to the source line from the second non-negative voltage potential applied to the source line during the hold operation to perform the read operation.

In accordance with additional aspects of this particular exemplary embodiment, the method may further comprise increasing the first non-negative voltage potential applied to the bit line from the first non-negative voltage potential applied to the bit line during the hold operation in order to reduce a disturbance during the read operation.

In accordance with yet another aspect of this particular exemplary embodiment, the method may further comprise increasing the second non-negative voltage potential applied to the source line from the second non-negative voltage potential applied to the source line during a hold operation to perform a preparation to start operation.

In accordance with other aspects of the particular exemplary embodiment, the method may further comprise decreasing the second non-negative voltage potential applied to the source line from the second non-negative voltage potential applied to the source line during a hold operation to perform a write logic high operation.

In accordance with further aspects of this particular exemplary embodiment, the method may further comprise increasing the third voltage potential applied to the word line from the third voltage potential applied to the word line during the hold operation to perform the write logic high operation.

In accordance with additional aspects of this particular exemplary embodiment, the method may further comprise maintaining the first non-negative voltage potential applied to the bit line from the first non-negative voltage potential applied to the bit line during the hold operation to perform the write logic high operation.

In accordance with yet another aspect of this particular exemplary embodiment, the method may further comprise increasing the third voltage potential applied to the word line from the third voltage potential applied to the word line during a hold operation to perform a write logic low operation.

In accordance with other aspects of the particular exemplary embodiment, the method may further comprise increasing the second non-negative voltage potential applied to the source line from the second non-negative voltage potential applied to the source line during the hold operation to perform the write logic low operation.

In accordance with further aspects of this particular exemplary embodiment, the method may further comprise maintaining the first non-negative voltage potential applied to the bit line from the first non-negative voltage potential applied to the bit line during the hold operation to perform the write logic low operation.

In accordance with additional aspects of this particular exemplary embodiment, the method may further comprise increasing the first non-negative voltage potential applied to the bit line during the write logic low operation from the first non-negative voltage potential applied to the bit line during the hold operation to maintain a logic high stored in the memory cell.

In another exemplary embodiment, the technique may be realized as a method for biasing a direct injection semiconductor memory device may comprise the steps of applying a first voltage potential to a first region via a bit line, wherein the first voltage potential may be positive during a hold operation and applying a second voltage potential to a second region via a source line, wherein the second voltage potential may be positive during the hold operation. The method may also comprise applying a third voltage potential to a word line, wherein the word line may be spaced apart from and capacitively to a body region that may be electrically floating and disposed between the first region and the second region. The method may further comprise applying a fourth voltage potential to a third region via a carrier injection line, wherein the fourth voltage potential may be positive during the hold operation, wherein the third region may be disposed below at least one of the first region, the body region, and the second region.

In accordance with other aspects of the particular exemplary embodiment, the method may further comprise increasing the third voltage potential applied to the word line from the third voltage potential applied to the word line during the hold operation to perform a read operation.

In accordance with further aspects of this particular exemplary embodiment, the method may further comprise increasing the second voltage potential applied to the source line from the second positive voltage potential applied to the source line during the hold operation to perform the read operation.

In accordance with additional aspects of this particular exemplary embodiment, the method may further comprise decreasing the first voltage potential applied to the bit line from the first voltage potential applied to the bit line during the hold operation to perform the read operation.

In accordance with yet another aspect of this particular exemplary embodiment, the method may further comprise decreasing the first voltage potential applied to the bit line from the first voltage potential applied to the bit line during the hold operation to perform a preparation to start operation.

In accordance with other aspects of the particular exemplary embodiment, the method may further comprise increasing the second voltage potential applied to the source line from the second non-negative voltage potential applied to the source line during a hold operation to perform a preparation to start operation.

In accordance with further aspects of this particular exemplary embodiment, the method may further comprise decreasing the second voltage potential applied to the source line from the second voltage potential applied to the source line during the hold operation to perform a write logic high operation.

In accordance with additional aspects of this particular exemplary embodiment, the method may further comprise increasing the third voltage potential applied to the word line from the third voltage potential applied to the word line during the hold operation to perform the write logic high operation.

In accordance with yet another aspect of this particular exemplary embodiment, the method may further comprise increasing the first voltage potential applied to the bit line from the first voltage potential applied to the bit line during a read operation to perform the write logic high operation.

In accordance with other aspects of the particular exemplary embodiment, the method may further comprise increasing the third voltage potential applied to the word line from the third voltage potential applied to the word line during the hold operation to perform a write logic low operation.

In accordance with further aspects of this particular exemplary embodiment, the method may further comprise increasing the second voltage potential applied to the source line from the second voltage potential applied to the source line during the hold operation to perform the write logic low operation.

In accordance with additional aspects of this particular exemplary embodiment, the method may further comprise decreasing the first voltage potential applied to the bit line from the first voltage potential applied to the bit line during the hold operation to perform the write logic low operation.

In accordance with yet another aspect of this particular exemplary embodiment, the method may further comprise increasing the first non-negative voltage potential applied to the bit line during the write logic low operation from the first non-negative voltage potential applied to the bit line during the hold operation to maintain a logic high stored in the memory cell.

The present disclosure will now be described in more detail with reference to exemplary embodiments thereof as shown in the accompanying drawings. While the present disclosure is described below with reference to exemplary embodiments, it should be understood that the present disclosure is not limited thereto. Those of ordinary skill in the art having access to the teachings herein will recognize additional implementations, modifications, and embodiments, as well as other fields of use, which are within the scope of the present disclosure as described herein, and with respect to which the present disclosure may be of significant utility.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to facilitate a fuller understanding of the present disclosure, reference is now made to the accompanying drawings, in which like elements are referenced with like numerals.

These drawings should not be construed as limiting the present disclosure, but are intended to be exemplary only.

FIG. 1 shows a schematic block diagram of a semiconductor memory device including a memory cell array, data write and sense circuitry, and memory cell selection and control circuitry in accordance with an embodiment of the present disclosure.

FIG. 2 shows a schematic diagram of at least a portion of a memory cell array having a plurality of memory cells in accordance with an embodiment of the present disclosure.

FIG. 3 shows a cross-sectional view of two memory cells along a column direction of a memory cell array in accordance with an embodiment of the present disclosure.

FIG. 4 shows control signal voltage waveforms for performing a refresh operation on a memory cell in accordance with an embodiment of the present disclosure.

FIG. 5 shows control signal voltage waveforms for performing a masking operation on one or more unselected memory cells along an active row to reduce a disturbance during active operations in accordance with an embodiment of the present disclosure.

FIG. 6 shows control signal voltage waveforms for performing a refresh operation on a memory cell in accordance with an alternative embodiment of the present disclosure.

FIG. 7 shows control signal voltage waveforms for performing a masking operation on one or more unselected memory cells along an active row to reduce a disturbance during active operations in accordance with an alternative embodiment of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Referring to FIG. 1, there is shown a schematic block diagram of a semiconductor memory device 10 comprising a memory cell array 20, data write and sense circuitry 36, and memory cell selection and control circuitry 38 in accordance with an embodiment of the present disclosure. The memory cell array 20 may comprise a plurality of memory cells 12 each coupled to the memory cell selection and control circuitry 38 via a word line (WL) 28, a source line (CN) 30, and/or a carrier injection line (EP) 34, and the data write and sense circuitry 36 via a bit line (EN) 32. It may be appreciated that the source line (CN) 30 and the hit line (EN) 32 are designations used to distinguish between two signal lines and they may be used interchangeably.

The data write and sense circuitry 36 may read data from and may write data to selected memory cells 12. In an exemplary embodiment, the data write and sense circuitry 36 may include a plurality of data sense amplifiers. Each data sense amplifier may receive at least one bit line (EN) 32 and a current or voltage reference signal. For example, each data sense amplifier may be a cross-coupled type sense amplifier to sense a data state stored in a memory cell 12. Also, each data sense amplifier may employ voltage and/or current sensing circuitry and/or techniques. In an exemplary embodiment, each data sense amplifier may employ current sensing circuitry and/or techniques. For example, a current sense amplifier may compare current from a selected memory cell 12 to a reference current (e.g., the current of one or more reference cells). From that comparison, it may be determined whether the selected memory cell 12 contains a logic high (e.g., binary “1” data state) or a logic low (e.g., binary “0” data state). It may be appreciated by one having ordinary skill in the art that various types or forms of data write and sense circuitry 36 (including one or more sense amplifiers, using voltage or current sensing techniques, using or not reference cells, to sense a data state stored in a memory cell 12) may be employed to read data stored in memory cells 12 and/or write data to memory cells 12.

The memory cell selection and control circuitry 38 may select and/or enable one or more predetermined memory cells 12 to facilitate reading data therefrom and/or writing data thereto by applying, control signals on one or more word lines (WL) 28, source lines (CN) 30, and/or carrier injection lines (EP) 34. The memory cell selection and control circuitry 38 may generate such control signals from address signals, for example, row address signals. Moreover, the memory cell selection and control circuitry 38 may include a word line decoder and/or driver. For example, the memory cell selection and control circuitry 38 may include one or more different control/selection techniques (and circuitry therefore) to select and/or enable one or more predetermined memory cells 12. Notably, all such control/selection techniques, and circuitry therefore, whether now known or later developed, are intended to fall within the scope of the present disclosure.

In an exemplary embodiment, the semiconductor memory device 10 may implement a two step write operation whereby all the memory cells 12 in a row of memory cells 12 may be first written to a first predetermined data state. For example, the memory cells 12 in a row of memory cell array 20 may be first written to a logic high (e.g., binary “1” data state) by executing a logic high (e.g., binary “1” data state) write operation. Thereafter, selected memory cells 12 in the active row of memory cell array 20 may be selectively written to a second predetermined data state. For example, selected memory cells 12 in the active row of the memory cell array 20 may be selectively written to a logic low (e.g., binary “0” data state) by executing a logic low binary “0” data state) write operation. The semiconductor memory device 10 may also implement a one step write operation whereby selected memory cells 2 in an active row of memory cells 12 may be selectively written to either a logic high (e.g., binary “1” data state) or a logic low (e.g., binary “0” data state) without first implementing a “clear” operation. The semiconductor memory device 10 may employ any of the exemplary writing, refreshing, holding, and/or reading techniques described herein.

The memory cells 12 may comprise N-type, P-type and/or both types of transistors. Circuitry that is peripheral to the memory array 20 (for example, sense amplifiers or comparators, row and column address decoders, as well as line drivers (not illustrated herein)) may also include P-type and/or N-type transistors. Regardless of whether P-type or N-type transistors are employed in memory cells 12 in the memory array 20, suitable voltage potentials (for example, positive or negative voltage potentials) for reading from and/or writing to the memory cells 12 may be applied.

Referring to FIG. 2, there is shown a schematic diagram of at least a portion of the memory cell array 20 having the plurality of memory cells 12 in accordance with an embodiment of the present disclosure. Each of the memory cells 12 may comprise a first bipolar transistor 14 a and a second bipolar transistor 14 b coupled to each other. For example, the first bipolar transistor 14 a and/or the second bipolar transistor 14 b may be an NPN bipolar transistor or a PNP bipolar transistor. As illustrated in FIG. 2, the first bipolar transistor 14 a may be an NPN bipolar transistor and the second bipolar transistor 14 b may be a PNP bipolar transistor. In another exemplary embodiment, the first memory transistor 14 a may be a PNP bipolar transistor and the second memory transistor 14 b may be an NPN bipolar transistor.

Each memory cell 12 may be coupled to a respective word line (WL) 28, a respective source line (CN) 30, a respective bit line (EN) 32, and a respective carrier injection line (EP) 34. Data may be written to or read from a selected memory cell 12 by applying suitable control signals to a selected word line (WL) 28, a selected source line (CN) 30, a selected bit line (EN) 32, and/or a selected carrier injection line (EP) 34. In an exemplary embodiment, each word line (WL) 28, source line (CN) 30, and carrier injection line (EP) 34 may extend horizontally parallel to each other in a row direction. Each bit line (EN) 32 may extend vertically in a column direction perpendicular to each word line (WL) 28, source line (CN) 30, and/or carrier injection line (EP) 34.

In an exemplary embodiment, one or more respective bit lines (EN) 32 may be coupled to one or more data sense amplifiers (not shown) of the data write and sense circuitry 36 to read data states of one or more memory cells 12 in the column direction. A data state may be read from one or more selected memory cells 12 by applying one or more control signals to the one or more selected memory cells 12 via a selected word line (WL) 28, a selected source line (CN) 30, and/or a selected carrier injection line (EP) 34 in order to generate a voltage potential and/or a current in the one or more selected memory cells 12. The generated voltage potential and/or current may then be output to the data write and sense circuitry 36 via a corresponding bit line (EN) 32 in order to read a data state stored in each selected memory cell 12.

In an exemplary embodiment, a data state may be read from a selected memory cell 12 via a selected bit line (EN) 32 coupled to the data sense amplifier of the data write and sense circuitry 36. The source line (CN) 30 may be separately controlled via a voltage potential/current source (e.g., a voltage potential/current driver) of the memory cell selection and control circuitry 38. In an exemplary embodiment, the data sense amplifier of the data write and sense circuitry 36 and the voltage potential/current source of the memory cell selection and control circuitry 38 may be configured on opposite sides of the memory cell array 20.

In an exemplary embodiment, a data state may be written to one or more selected memory cells 12 by applying one or more control signals to the one or more selected memory cells 12 via a selected word line (WL) 28, a selected source line (CN) 30, a selected bit line (EN) 32, and/or a selected carrier injection line (EP) 34. The one or more control signals applied to the one or more selected memory cells 12 via a selected word line (WL) 28, a selected source line (CN) 30, a selected bit line (EN) 32, and/or a selected carrier injection line (EP) 34 may control the first bipolar transistor 14 a and/or the second bipolar transistor 14 b of each selected memory cell 12 in order to write a desired data state to each selected memory cell 12.

The carrier injection lines (EP) 34 corresponding to different rows of the memory cell array 20 may be coupled to each other. In an exemplary embodiment, the carrier injection lines (EP) 34 (e.g., EP<0>, EP<1>, and EP<2>) of the memory cell array 20 may be coupled together and driven by subcircuits of the memory cell selection and control circuitry 38 (e.g., driver, inverter, and/or logic circuits). The subcircuits coupled to each carrier injection line (EP) 34 may be independent voltage drivers located within and/or integrated with the memory cell selection and control circuitry 38. To reduce an amount of area required by the subcircuits of the memory cell selection and control circuitry 38, a plurality of carrier injection lines (EP) 34 of the memory cell array 20 may be coupled to a single subcircuit within the memory cell selection and control circuitry 38. In an exemplary embodiment, the subcircuits of the memory cell selection and control circuitry 38 may bias a plurality of carrier injection lines (EP) 34 coupled together to different voltage potentials and/or current levels (e.g., 0V, 1.0V, etc).

As illustrated, in FIG. 2, three rows of carrier infection lines (EP) 34 may be coupled together, however, it may be appreciated by one skilled in the art that the number of rows of carrier injection lines (EP) 34 coupled together within the memory cell array 20 may vary. For example, four rows of carrier injection lines (EP) 34, sixteen rows of carrier injection lines (EP) 34, thirty-two rows of carrier injection lines (EP) 34, and/or sixty-four rows of carrier injection lines (EP) 34 may be coupled together.

Referring to FIG. 3, there is shown a cross-sectional view of two memory cells 12 along a column direction of the memory cell array 20 shown in FIG. 1 in accordance with an embodiment of the present disclosure. As discussed above, each memory cell 12 may comprise two bipolar transistors. In an exemplary embodiment, the first bipolar transistor 14 a may be an NPN bipolar transistor and the second bipolar transistor 14 b may be a PNP bipolar transistor. In an exemplary embodiment, the first bipolar transistor 14 a and the second bipolar transistor 14 b may share one or more common regions. The first bipolar transistor 14 a may comprise an N+ emitter region 120, a P− base region 122, and an N+ collector region 124. The second bipolar transistor 14 b may comprise the P− collector region 122, the N+ base region 124, and a P+ emitter region 126. The N+ region 120, the P− region 122, the N+ region 124, and/or the P+ region 126 may be disposed in a sequential contiguous relationship within a pillar or fin configuration that may extend vertically from and/or perpendicularly to a plane defined by an N− well region 128 and/or an P− substrate 130. In an exemplary embodiment, the P− region 122 may be an electrically floating body region of the memory cell 12 configured to accumulate/store charges, and may be spaced apart from and capacitively coupled to the word line (WL) 28.

As shown in FIG. 3, the N+ emitter region 120 of the first bipolar transistor 14 a may be coupled to a corresponding bit line (EN) 32. In an exemplary embodiment, the N+ emitter region 120 of the first bipolar transistor 14 a may be formed of a semiconductor material (e.g., silicon) comprising donor impurities and coupled to the bit line (EN) 32. For example, the N+ emitter region 120 may be formed of a silicon material doped with phosphorous or arsenic impurities. In an exemplary embodiment, the bit line (EN) 32 may be formed of a metal material. In another exemplary embodiment, the bit line (EN) 32 may be formed of a polycide material (e.g., a combination of a metal material and a silicon material). The bit line (EN) 32 may provide a means for accessing one or more selected memory cells 12 on a selected row.

As also shown in FIG. 3, the P− base region 122 of the first bipolar transistor 14 a or the P− collector region 122 of the second bipolar transistor 14 b may be capacitively coupled to a corresponding word line (WL) 28. In an exemplary embodiment, the P− region 122 may be formed of a semiconductor material (e.g., silicon) comprising acceptor impurities. For example, the P− region 122 may be formed of a silicon material doped with boron impurities. The P− region 122 and the word line (WL) 28 may be capacitively coupled via an insulating or dielectric material. In an exemplary embodiment, the word line (WL) 28 may be formed of a polycide material or a metal material. In an exemplary embodiment, the word line (WL) 28 may extend in a row direction of the memory cell array 20.

As further shown in FIG. 3, the N+ region 124 of the memory cell 12 may be coupled to a source line (CN) 30. In an exemplary embodiment, the N+ region 124 may be formed of a semiconductor material (e.g., silicon) comprising donor impurities. For example, the N+ region 124 may be formed of a silicon material doped with phosphorous or arsenic impurities. In an exemplary embodiment, the source line (CN) 30 may be formed of a polycide material. In another exemplary embodiment, the source line (CN) 30 may be formed of a metal material. The source line (CN) 30 may circumferentially surround the N+ region 124 of the memory cell 12. As such, the source line (CN) 30 may reduce a disturbance to the memory cell 12. For example, the source line (CN) 30 may be formed of a metal material and reduce a hole disturbance in the memory cell 12. The source line (CN) 30 may extend horizontally in a row direction parallel to the word line (WL) 28 and/or the carrier injection line (EP) 34, and may be coupled to a plurality of memory cells 12 (e.g., a row of memory cells 12). For example, the source line (CN) 30, the word line (WL) 28, and/or the carrier injection line (EP) 34 may be arranged in different planes and configured to be parallel to each other. In an exemplary embodiment, the source line (CN) 30 may be arranged in a plane between a plane containing the word line (WL) 28 and a plane containing the carrier injection line (EP) 34.

As further shown in FIG. 3, the P+ emitter region 126 of the second bipolar transistor 14 a may be coupled to the carrier injection line (EP) 34. The P+ region 126 may be formed of a semiconductor material (e.g., silicon) comprising acceptor impurities and directly coupled to the carrier injection line (EP) 34. For example, the P+ region 126 may be formed of a silicon material doped with boron impurities. In an exemplary embodiment, the P+ region 126 may be configured as an input region for charges to be stored in the P− region 122 of the memory cell 12. The charges to be stored in the P− region 122 of the memory cell 12 may be supplied by the carrier injection line (EP) 34 and input into the P− region 122 via the N+ region 124 and/or the P+ region 126.

The carrier injection line (EP) 34 may be formed of a polycide material or a metal material. In an exemplary embodiment, the carrier injection line (EP) 34 may extend in a row direction of the memory cell array 20. For example, the carrier injection line (EP) 34 may extend horizontally in parallel to the word line (WL) 28 and/or the source line (CN) 30, and may be coupled to a plurality of memory cells 12 (e.g., a row of memory cells 12). For example, the carrier injection line (EP) 34, the word line (WL) 28, and/or the source line (CN) 30 may be arranged in different planes and configured to be parallel to each other. In an exemplary embodiment, the carrier injection line (EP) 34 may be arranged in a plane below a plane containing the word line (WL) 28 and a plane containing the carrier injection line (EP) 34.

As discussed above, carrier injection lines (EP) 34 corresponding to different rows of the memory cell array 20 may be coupled to each other in order to bias and/or access memory cells 12 in different rows of the memory cell array 20. Thus, in an exemplary embodiment, P+ regions 126 of memory cells 12 in different rows of memory cell array 20 may be coupled to each other by coupling the carrier injection lines (EP) 34 corresponding to different rows of the memory cell array 20. In another exemplary embodiment, carrier injection lines (EP) 34 corresponding to different rows of the memory cell array 20 may be coupled to each other via a carrier injection line plate, a carrier injection line grid, or a combination of a carrier injection line plate and a carrier injection line grid.

As further shown in FIG. 3, the N-well region 128 may be disposed between the P+ region 126 and the P− substrate 130. The N-well region 128 may be formed of a semiconductor material (e.g., silicon) comprising donor impurities and extend in a planar direction parallel to the P− substrate 130. For example, the N-well region 128 may be formed of a silicon material doped with phosphorous or arsenic impurities. In an exemplary embodiment, the N-well region 128 may comprise a strip protruding portion corresponding to each row of the memory cell array 20. For example, the strip protruding portion of the N-well region 128 may be configured to accommodate a row of memory cells 12 of the memory cell array 20.

In an exemplary embodiment, the P− substrate 130 may be made of a semiconductor material (e.g., silicon) comprising acceptor impurities and may form a base of the memory cell array 20. For example, the P− substrate 130 may be formed of a silicon material doped with boron impurities. In alternative exemplary embodiments, a plurality of P− substrates 130 may form a base of the memory cell array 20 or a single P− substrate 130 may form the base of the memory cell array 20. Also, the P− substrate 130 may be made in the form of a P-well substrate.

Referring to FIG. 4, there are shown control signal voltage waveforms for performing a refresh operation on a memory cell in accordance with an embodiment of the present disclosure. The refresh operation may include control signals configured to perform one or more sub-operations. In an exemplary embodiment, the refresh operation may include a preparation to start operation, a read operation, a write logic high (e.g., binary “1” data state) operation, a write logic low (e.g., binary “0” data state) operation, and/or a preparation to end operation.

Prior to performing a refresh operation, the control signals may be configured to perform a hold operation in order to maintain a data state (e.g., a logic high (binary “1” data state) or a logic low (e.g., binary “0” data state)) stored in the memory cell 12. In particular, the control signals may be configured to perform a hold operation in order to maximize a retention time of a data state (e.g., a logic low (binary “0” data state) and/or a logic high (e.g., binary “1” data state)) stored in the memory cell 12. Also, the control signals for the hold operation may be configured to eliminate or reduce activities or fields (e.g., electrical fields between junctions which may lead to leakage of charges) within the memory cell 12.

In an exemplary embodiment, during a hold operation, a negative voltage potential may be applied to the word line (WL) 28 that may be capacitively coupled to the P− region 122 of the memory cell 12, while voltage potentials applied to other regions (e.g., the N+ region 120, the N+ region 124, and/or the P+ region 126) may be maintained at approximately 0V or higher. For example, the negative voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122 of the memory cell 12) may be −1.5V. The voltage potential applied to the bit line (EN) 32 may be maintained at approximately 0V. The voltage potentials applied to the source line (CN) 30 and/or the carrier injection line (EP) 34 may be maintained at approximately 0.7V. During the hold operation, the junction between the N+ region 124 and the P− region 122 and the junction between the N+ region 120 and the P− region 122 may be reverse biased in order to retain a data state (e.g., a logic high (binary “1” data state) or a logic low (binary “0” data state)) stored in the memory cell 12.

In an exemplary embodiment, a refresh operation may include control signals to perform a preparation to start operation where the control signals may be applied to a memory cell 12 in order to prepare the memory cell 12 for one or more subsequent operations (e.g., a read operation and/or a write operation). For example, control signals applied to a memory cell 12 may be configured to minimize a time delay between voltage potentials applied to the N+ region 124 of the memory cell 12 and the word line (WL) 28 in order to reduce a disturbance. A leakage of charge carriers from the P− region 122 may result when the preparation to start operation is not performed. For example, when 0V is applied to the bit line (EN) 32, 1.1V is applied to the source line (CN) 30 (at the start of a read operation), and −1.5V is applied to the word line (WL) 28, an electric field may be created across the junction from the P− region 122 and the N+ region 124. The electric field may cause a leakage (e.g., in a logic high (binary “1” data state) or an increase (e.g., in a logic low (binary “0” data state)) of charge carriers stored in the memory cell 12, or band-to-band tunneling (e.g., gate-induced drain leakage “GIDL”).

In an exemplary embodiment, control signals applied to a memory cell 12 during the preparation to start operation may be configured to reduce band-to-band tunneling (e.g., gate-induced drain leakage “GIDL”). For example, a positive voltage potential may be applied to the N+ region 124 of the memory cell 12, while voltage potentials applied to other regions (e.g., the N+ region 120, the P− region 122 via capacitive coupling with the word line (WL) 28, and/or the P+ region 126) of the memory cell 12 may be maintained at the same voltage potentials applied during the hold operation. The positive voltage potential applied to the source line (CN) 30 may be raised to 1.1V from 0.7V. The voltage potential applied to the bit line (EN) 32 may be maintained at 0V and the carrier injection line (EP) 34 may be maintained at 0.7V. The voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122) may be maintained at −1.5V.

In an exemplary embodiment, a refresh operation may also include a read operation where the control signals may be configured to read a data state (e.g., a logic low (binary “0” data state) and/or a logic high (binary “1” data state)) stored in one or more selected memory cells 12 of one or more selected rows of the memory cell array 20. The control signals may be configured to a predetermined voltage potential to implement a read operation via the bit line (EN) 32. In an exemplary embodiment, a voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122) and/or a voltage potential applied to the N+ region 124 via the source line (CN) 30 may be raised to a predetermined voltage potential in order to read a data state stored in the memory cell 12. In another exemplary embodiment, in the event that voltage potentials are applied to the memory cell 12 in preparation for the read operation (e.g., in the preparation to start operation as discussed above), the voltage potential applied to the N+ region 124 of the memory cell 12 may remain the same as the voltage potential applied during the preparation to start operation. For example, the voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122 of the memory cell 12) may be raised to 0V from −1.5V, while the voltage potential applied to the N+ region 124 of the memory cell 12 via the source line (CN) 30 may be raised to or maintained at 1.1V.

In an exemplary embodiment, during the read operation, the voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122 of the memory cell 12) may be raised to 0V and the voltage potential applied to the source line (CN) 30 may be raised to 1.1V. Under such biasing, the junction between the P− region 122 and the N+ region 120 may become forward biased. Also, under such biasing, the junction between the P− region 122 and the N+ region 124 may be reverse biased or become weakly forward biased (e.g., above a reverse bias voltage and below a forward bias threshold voltage, or a voltage potential at a p-diffusion region between the P− region 122 and the N+ region 124 is higher than the voltage potential at an n-diffusion region between the P− region 122 and the N+ region 124). A voltage potential or current may be generated when forward biasing the junction between the P− region 122 and the N+ region 120. The voltage potential or current generated may be output to a data sense amplifier via the bit line (EN) 32 coupled to the N+ region 120. An amount of voltage potential or current generated may be representative of a data state (e.g., a logic low (binary “0” data state) and/or a logic high (binary “1” data state)) stored in the memory cell 12.

In an exemplary embodiment, when a logic low (e.g., binary “0” data state) is stored in the memory cell 12, the junction between the P− region 122 and the N+ region 120 may remain reverse biased or become weakly forward biased (e.g., above a reverse bias voltage and below a forward bias threshold voltage or a voltage potential at a p-diffusion region between the P− region 122 and the N+ region 124 is higher than a voltage potential at an n-diffusion region between the P− region 122 and the N+ region 124). A small amount of voltage potential and current or no voltage potential and current (e.g., compared to a reference voltage potential or current) may be generated when the junction between the P− region 122 and the N+ region 120 is reverse biased or weakly forward biased. A data sense amplifier in the data write and sense circuitry 36 may detect the small amount of voltage potential or current (e.g., compared to a reference voltage potential or current) or no voltage potential or current via the bit line (EN) 32 coupled to the N+ region 120.

In another exemplary embodiment, when a logic high (e.g., binary “1” data state) is stored in the memory cell 12, the junction between the P− region 122 and the N+ region 120 may be forward biased. A larger amount of voltage potential or current (e.g., compared to a reference voltage potential or current) may be generated when the junction between the P− region 122 and the N+ region 120 is forward biased. A data sense amplifier in the data write and sense circuitry 36 may detect the larger amount of voltage potential or current via the bit line (EN) 32 coupled to the N+ region 120.

In an exemplary embodiment, a refresh operation may also include a write logic high (e.g., binary “1” data state) operation where the control signals may be configured to write a logic high (e.g., binary “1” data state) to one or more selected memory cells 12 of one or more selected rows of the memory cell array 20. For example, the write logic high (e.g., binary “1” data state) operation may be performed on one or more selected rows of the memory cell array 20 or the entire memory cell array 20 and a subsequent write logic low (e.g., binary “0” data state) operation may be performed on one or more selected memory cells 12. In an exemplary embodiment, a voltage potential applied to the N+ region 120 of the memory cell 12 via the bit line (EN) 32 may be maintained at 0V, and a voltage potential applied to the P+ region 126 of the memory cells 12 via the carrier injection line (EP) 34 may be maintained at 0.7V. A voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122) may be lowered to −1.0V. Simultaneously to or subsequent to lowering a voltage potential applied to the word line (WL) 28, a voltage potential applied to the source line (CN) 30 may be lowered to 0V from 1.1V.

Under such biasing, the junction between the N+ region 120 and the P− region 122 may be reverse biased and the junction between the P+ region 126 and the N+ region 124 may become forward biased. A logic high (e.g., binary “1” data state) may be written to the P− region 122 (e.g., majority charge carriers injected into the P− region 122 from the P+ region 126 via the N+ region 124) via the forward biased junction between the P+ region 126 and the N+ region 124. As more majority charge carriers are accumulated in the P− region 122, a voltage potential at the P− region 122 may increase to approximately 0.7V to 1.0V above a voltage potential at the N+ region 124. At this time, the first bipolar transistor 14 a may start to switch to an “ON” state and current generated by the first bipolar transistor 14 a may increase the voltage potential at the N+ region 124 due to a resistive voltage potential drop on the source line (CN) 30. The increase of the voltage potential at the N+ region 124 may lead to a decrease of current flow in the second bipolar transistor 14 b, which in turn may cause a decrease in a current load on the carrier injection line (EP) 34, thus ending the write logic high (e.g., binary “1” data state) operation.

In an exemplary embodiment, a refresh operation may also include a write logic low (e.g., binary “0” data state) operation where the control signals may be configured to perform one or more write operations to one or more selected memory cells 12. For example, the write logic low (e.g., binary “0” data state) operation may be performed to one or more selected memory cells 12 after a write logic high (e.g., binary “1” data state) operation in order to deplete majority charge carriers that may have accumulated in the P− regions 122 of the one or more selected memory cells 12. In an exemplary embodiment, a voltage potential applied to the N+ region 120 via a corresponding bit line (EN(“0”)) 32 may be maintained at 0V in order to perform the write logic low (e.g., binary “0” data state) operation. A voltage potential applied to the N+ region 124 via the source line (CN) 30 may be raised to 1.1V from 0V. Subsequent to or simultaneously to raising the voltage potential applied to the N+ region 124 via the source line (CN) 30, a voltage potential applied to the word line (WL) 28 may be raised to approximately 0.4V from −1.0V.

Under such biasing, the junction between the N+ region 120 and the P− region 122 may become forward biased and the first bipolar transistor 14 a (e.g., regions 120-124) may be switched to an “ON” state. The majority charge carriers that may have accumulated in the P− region 122 during the write logic high (e.g., binary “1” data state) operation may be removed via the forward biased junction between the N+ region 120 and the P− region 122. By removing the majority charge carriers that may have accumulated in the P− region 122, a logic low (e.g., binary “0” data state) may be written to the memory cell 12.

In order to maintain a logic high (e.g., binary “1” data state) in one or more unselected memory cells 12 during the write logic low (e.g., binary “0” data state) operation, a masking operation may be performed on the one or more unselected memory cells 12. For example, the voltage potential applied to the N+ region 120 of the one or more unselected memory cells 12 via a corresponding bit line (EN(“1”)) 32 may be raised to 0.7V or higher (e.g., 1.2V) in order to prevent the depletion of majority charge carriers that may have accumulated in the P− region 122. Under such biasing, the junction between the N+ region 120 and the P− region 122 may not be forward biased and the junction between the P− region 122 and the N+ region 124 may not be forward biased, thereby preventing the depletion of majority charge carriers accumulated in the P− region 122 and the logic high (e.g., binary “1” data state) may be maintained in the memory cell 12.

In an exemplary embodiment, a refresh operation may also include a preparation to end operation. During the preparation to end operation, the voltage potentials applied to the memory cells 12 may adjust an amount of majority charge carriers or data states stored in the P− regions 122 of the memory cells 12. A voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122) may be lowered to −1.1V from 0.4V and may determine an amount of majority charge carriers or data states stored in the P− regions 122 of the memory cells 12. Also, voltage potentials applied to the N+ regions 124 and the P+ regions 126 may be lowered to and/or maintained at 0.7V in order to maintain data states stored in the memory cells 12. Further, a voltage potential applied to the N+ regions 120 of the memory cells 12 that may store a logic low (e.g., binary “0” data state) may be maintained at 0V. In contrast, a voltage potential applied to the N+ regions 120 of the memory cells 12 that may store a logic high (e.g., binary “1” data state) may be lowered to 0V from 0.7V during a masking operation.

Referring to FIG. 5, there are shown control signal voltage waveforms for performing a masking operation on one or more unselected memory cells 12 along an active row to reduce a disturbance during active operations in accordance with an embodiment of the present disclosure. For example, during one or more active operations (e.g., read operation, write operation, sense operation, preparation to start/end operation, and/or refresh operation), voltage potentials may be applied to every memory cell 12 along an active row via a corresponding word line (WL) 28, a corresponding source line (CN) 30, and/or a corresponding carrier injection line (EP) 34. However, while the active operations may be performed on one or more selected memory cells 12 along the active row, one or more unselected memory cells 12 along the active row may experience a disturbance caused by the voltage potentials applied via the corresponding word line (WL) 28, the corresponding source line (CN) 30, and/or the corresponding carrier injection line (EP) 34 during the active operations. In order to reduce a disturbance experienced by the one or more unselected memory cells 12 along the active row, a masking operation may be performed on the one or more unselected memory cells 12.

In an exemplary embodiment, during a masking operation, a voltage potential may be applied to the one or more unselected memory cells 12 on the active row via a corresponding bit line (EN(“Mask”)) 32. The voltage potential applied via the corresponding bit line (EN(“Mask”)) 32 to the one or more unselected memory cells 12 on the active row may be raised to a predetermined voltage potential. In an exemplary embodiment, the voltage potential applied to the corresponding bit line (EN(“Mask”)) 32 associated with the one or more unselected memory cells 12 along the active row may be 0.7V in order to reduce a disturbance caused by the active operations.

FIG. 6 shows control signal voltage waveforms for performing a refresh operation on a memory cell in accordance with an alternative embodiment of the present disclosure. The refresh operation may include control signals configured to perform one or more sub-operations. In an exemplary embodiment, the refresh operation may include a preparation to start operation, a read operation, a write logic high (e.g., binary “1” data state) operation, a write logic low (e.g., binary “0” data state) operation, and/or preparation to end operation.

Prior to performing a refresh operation, the control signals may be configured to perform a hold operation in order to maintain a data state (e.g., a logic high (binary “1” data state) or a logic low (e.g., binary “0” data state)) stored in the memory cell 12. In particular, the control signals may be configured to perform a hold operation in order to maximize a retention time of a data state (e.g., a logic low (binary “0” data state) and/or a logic high (e.g., binary “1” data state)) stored in the memory cell 12. Also, the control signals for the hold operation may be configured to eliminate or reduce activities or fields (e.g., electrical fields between junctions which may lead to leakage of charges) within the memory cell 12.

In an exemplary embodiment, during a hold operation, a negative voltage potential may be applied to the word line (WL) 28 that may be capacitively coupled to the P− region 122 of the memory cell 12, while voltage potentials applied to other regions (e.g., the N+ region 120, the N+ region 124, and/or the P+ region 126) may be maintained above 0V. For example, the negative voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122 of the memory cell 12) may be −1.5V. The voltage potential applied to the bit line (EN) 32 may be maintained at approximately 0.3V. The voltage potentials applied to the source line (CN) 30 and/or the carrier injection line (EP) 34 may be maintained at approximately 0.7V. During the hold operation, the junction between the N+ region 124 and the P− region 122 and the junction between the N+ region 120 and the P− region 122 may be reverse biased in order to retain a data state (e.g., a logic high (binary “1” data state) or a logic low (binary “0” data state)) stored in the memory 12.

In an exemplary embodiment, a refresh operation may include control signals to perform a preparation to start operation where the control signals may be applied to a memory cell 12 in order to prepare the memory cell 12 for one or more subsequent operations (e.g., a read operation and/or a write operation). For example, control signals applied to a memory cell 12 may be configured to minimize a time delay between voltage potentials applied to the N+ region 124 of the memory cell 12 and the word line (WL) 28 in order to reduce a disturbance. A leakage of charge carriers from the P− region 122 may result when the preparation to start operation is not performed. For example, when 0V is applied to the bit line (EN) 32, 1.1V is applied to the source line (CN) 30 (at the start of a read operation), and −1.5V is applied to the word line (WL) 28, an electric field may be created across the junction from the P− region 122 and the N+ region 124. The electric field may cause a leakage (e.g., in a logic high (binary “1” data state) or an increase (e.g., in a logic low (binary “0” data state)) of charge carriers stored in the memory cell 12, or band-to-band tunneling (e.g., gate-induced drain leakage “GIDL”).

In an exemplary embodiment, control signals applied to a memory cell 12 during the preparation to start operation may be configured to reduce band-to-band tunneling (e.g., gate-induced drain leakage “GIDL”). For example, a positive voltage potential may be applied to the N+ region 124 of the memory cell 12, while voltage potential applied to the N+ region 120 may be lowered. The voltage potentials applied to other regions (e.g., the P− region 122 via capacitive coupling with the word line (WL) 28 and/or the P+ region 126) of the memory cell 12 may be maintained at the same voltage potentials applied during the hold operation. The positive voltage potential applied to the source line (CN) 30 may be raised to 1.1V from 0.7V. The voltage potential applied to the bit line (EN) 32 may be lowered to 0V from 0.3V. The voltage potential applied to the carrier injection line (EP) 34 may be maintained at 0.7V and the voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122) may be maintained at −1.5V.

In an exemplary embodiment, a refresh operation may also include a read operation where the control signals may be configured to read a data state (e.g., a logic low (binary “0” data state) and/or a logic high (binary “1” data state)) stored in one or more selected memory cells 12 of one or more selected rows of the memory cell array 20. The control signals may be configured to a predetermined voltage potential to implement a read operation via the bit line (EN) 32. In an exemplary embodiment, a voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122) and/or a voltage potential applied to the N+ region 124 via the source line (CN) 30 may be raised to a predetermined voltage potential. The voltage potential applied to the N+ region 120 via the bit line (EN) 32 may be lowered to a predetermined voltage potential in order to read a data state stored in the memory cell 12. In another exemplary embodiment, in the event that voltage potentials are applied to the memory cell 12 in preparation for the read operation (e.g., in the preparation to start operation as discussed above), the voltage potentials applied to the N+ region 120 and the N+ region 124 of the memory cell 12 may remain the same as the voltage potential applied during the preparation to start operation. For example, the voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122 of the memory cell 12) may be raised to 0V from −1.5V. The voltage potential applied to the N+ region 120 of the memory cell 12 via the bit line (EN) 32 may be lowered to or maintained at 0V. The voltage potential applied to the N+ region 124 via the source line (CN) 30 of the memory cell 12 may be raised to or maintained at 1.1V.

In an exemplary embodiment, during the read operation, the voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122 of the memory cell 12) may be raised to 0V. The voltage potential applied to the source line (CN) 30 may be raised to 1.1V and the voltage potential applied to the bit line (EN) 32 may be lowered to 0V. Under such biasing, the junction between the P− region 122 and the N+ region 120 may become forward biased. Also, under such biasing, the junction between the P− region 122 and the N+ region 124 may be reverse biased or become weakly forward biased (e.g., above a reverse bias voltage and below a forward bias threshold voltage, or a voltage potential at a p-diffusion region between the P− region 122 and the N+ region 124 is higher than a voltage potential at an n-diffusion region between the P− region 122 and the N+ region 124). A voltage potential or current may be generated when forward biasing the junction between the P− region 122 and the N+ region 120. The voltage potential or current generated may be output to a data sense amplifier via the bit line (EN) 32 coupled to the N+ region 120. An amount of voltage potential or current generated may be representative of a data state (e.g., a logic low (binary “0” data state) and/or a logic high (binary “1” data state)) stored in the memory cell 12.

In an exemplary embodiment, when a logic low (e.g., binary “0” data state) is stored in the memory cell 12, the junction between the P− region 122 and the N+ region 120 may remain reverse biased or become weakly forward biased (e.g., above a reverse bias voltage and below a forward bias threshold voltage, or a voltage potential at a p-diffusion region between the P− region 122 and the N+ region 124 is higher than a voltage potential at an n-diffusion region between the P− region 122 and the N+ region 124). A small amount of voltage potential and current (e.g., compared to a reference voltage potential or current) or no voltage potential and current may be generated when the junction between the P− region 122 and the N+ region 120 is reverse biased or weakly forward biased. A data sense amplifier in the data write and sense circuitry 36 may detect the small amount of voltage potential or current (e.g., compared to a reference voltage potential or current) or no voltage potential or current via the bit line (EN) 32 coupled to the N+ region 120.

In another exemplary embodiment, when a logic high (e.g., binary “1” data state) is stored in the memory cell 12, the junction between the P− region 122 and the N+ region 120 may be forward biased. A larger amount of voltage potential or current (e.g., compared to a reference voltage potential or current) may be generated when the junction between the P− region 122 and the N+ region 120 is forward biased. A data sense amplifier in the data write and sense circuitry 36 may detect the larger amount of voltage potential or current via the bit line (EN) 32 coupled to the N+ region 120.

In an exemplary embodiment, a refresh operation may also include a write logic high (e.g., binary “1” data state) operation where the control signals may be configured to write a logic high (e.g., binary “1” data state) to one or more selected memory cells 12 of one or more selected rows of the memory cell array 20. For example, the write logic high (e.g., binary “1” data state) operation may be performed on one or more selected rows of the memory cell array 20 or the entire memory cell array 20 and a subsequent write logic low (e.g., binary “0” data state) operation may be performed on one or more selected memory cells 12. In an exemplary embodiment, a voltage potential applied to the P+ region 126 of the memory cells 12 via the carrier injection line (EP) 34 may be maintained at 0.7V. A voltage potential applied to the N+ region 120 of the memory cell 12 via the bit line (EN) 32 may be raised to 0.3V. Simultaneously to or subsequent to raising a voltage potential applied to the bit line (EN) 32, the voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122) may be lowered to −1.0V and a voltage potential applied to the source line (CN) 30 may be lowered to 0V from 1.1V.

Under such biasing, the junction between the N+ region 120 and the P− region 122 may be reverse biased and the junction between the P+ region 126 and the N+ region 124 may become forward biased. A logic high (e.g., binary “1” data state) may be written to the P− region 122 (e.g., majority charge carriers injected into the P− region 122 from the P+ region 126 via the N+ region 124) via the forward biased junction between the P+ region 126 and the N+ region 124. As more majority charge carriers are accumulated in the P− region 122, a voltage potential at the P− region 122 may increase to approximately 0.7V to 1.0V above a voltage potential at the N+ region 124. At this time, the first bipolar transistor 14 a may start to switch to an “ON” state and current generated by the first bipolar transistor 14 a may increase the voltage potential at the N+ region 124 due to a resistive voltage potential drop on the source line (CN) 30. The increase of the voltage potential at N+ the region 124 may lead to a decrease of current flow in the second bipolar transistor 14 b, which in turn may cause a decrease in a current load on the carrier injection line (EP) 34, thus ending the write logic high (e.g., binary “1” data state) operation.

In an exemplary embodiment, a refresh operation may also include a write logic low (e.g., binary “0” data state) operation where the control signals may be configured to perform one or more write operations to one or more selected memory cells 12. For example, the write logic low (e.g., binary “0” data state) operation may be performed to one or more selected memory cells 12 after a write logic high (e.g., binary “1” data state) operation in order to deplete majority charge carriers that may have accumulated in the P− regions 122 of the one or more selected memory cells 12. In an exemplary embodiment, a voltage potential applied to the N+ region 120 via a corresponding bit line (EN(“0”)) 32 may be lowered to approximately 0V from 0.3V in order to perform the write logic low (e.g., binary “0” data state) operation. A voltage potential applied to the N+ region 124 via the source line (CN) 30 may be raised to 1.1V from 0V. Subsequent to or simultaneously to lowering the voltage potential applied to the N+ region 120 via the corresponding bit line (EN(“0”)) 32 and/or raising the voltage potential applied to the N+ region 124 via the source line (CN) 30, a voltage potential applied to the word line (WL) 28 may be raised to approximately 0.4V from −1.0V.

Under such biasing, the junction between the N+ region 120 and the P− region 122 may become forward biased and the first bipolar transistor 14 a (e.g., regions 120-124) may be switched to an “ON” state. The majority charge carriers that may have accumulated in the P− region 122 during the write logic high (e.g., binary “1” data state) operation may be removed via the forward biased junction between the N+ region 120 and the P− region 122. By removing the majority charge carriers that may have accumulated in the P− region 122, a logic low (e.g., binary “0” data state) may be written to the memory cell 12.

In order to maintain a logic high (e.g., binary “1” data state) in one or more unselected memory cells 12 during the write logic low (e.g., binary “0” data state) operation, a masking operation may be performed on the one or more unselected memory cells 12. For example, the voltage potential applied to the N+ region 120 via a corresponding bit line (EN(“1”)) 32 of the one or more unselected memory cells 12 may be raised to 0.7V or higher (e.g., 1.2V) in order to prevent the depletion of majority charge carriers that may have accumulated in the P− region 122. Under such biasing, the junction between the N+ region 120 and the P− region 122 may not be forward biased and the junction between the P− region 122 and the N+ region 124 may not be forward biased in order to prevent the depletion of majority charge carriers accumulated in the P− region 122 and the logic high (e.g., binary “1” data state) may be maintained in the memory cell 12.

In an exemplary embodiment, a refresh operation may also include a preparation to end operation. During the preparation to end operation, the voltage potentials applied to the memory cells 12 may adjust an amount of majority charge carriers or data states stored in the P− regions 122 of the memory cells 12. A voltage potential applied to the word line (WL) 28 (e.g., capacitively coupled to the P− region 122) may be lowered to −1.5V from 0.4V and may determine an amount of majority charge carriers or data states stored in the P− regions 122 of the memory cells 12. Also, voltage potentials applied to the N+ regions 124 and the P+ regions 126 may be lowered to and/or maintained at 0.7V in order to maintain data states stored in the memory cells 12. Further, a voltage potential applied to the N+ regions 120 of the memory cells 12 that may store a logic low (e.g., binary “0” data state) may be raised to 0.3V. In contrast, a voltage potential applied to the N+ regions 120 of the memory cells 12 that may store a logic high (e.g., binary “1” data state) may be lowered to 0.3V from 0.7V during a masking operation.

Referring to FIG. 7, there are shown control signal voltage waveforms for performing a masking operation on one or more unselected memory cells 12 along an active row to reduce a disturbance during active operations in accordance with an alternative embodiment of the present disclosure. For example, during one or more active operations (e.g., read operation, write operation, sense operation, preparation to start/end operation, and/or refresh operation), voltage potentials may be applied to every memory cell 12 along an active row via a corresponding word line (WL) 28, a corresponding source line (CN) 30, and/or a corresponding carrier injection line (EP) 34. However, while the active operations may be performed on one or more selected memory cells 12 along the active row, one or more unselected memory cells 12 along the active row may experience a disturbance caused by the voltage potentials applied via the corresponding word line (WL) 28, the corresponding source line (CN) 30, and/or the corresponding carrier injection line (EP) 34 during the active operations. In order to reduce a disturbance experienced by the one or more unselected memory cells 12 along the active row, a masking operation may be performed on the one or more unselected memory cells 12.

In an exemplary embodiment, during a masking operation, a voltage potential may be applied to the one or more unselected memory cells 12 on the active row via a corresponding bit line (EN(“Mask”)) 32. The voltage potential applied via the corresponding bit line (EN (“Mask”)) 32 to the one or more unselected memory cells 12 on the active row may be raised to a predetermined voltage potential. In an exemplary embodiment, the voltage potential applied to the corresponding bit line (EN(“Mask”)) 32 associated with the one or more unselected memory cells 12 along the active row may be 0.7V in order to reduce a disturbance caused by the active operations.

At this point it should be noted that providing a direct injection semiconductor memory device in accordance with the present disclosure as described above may involve the processing of input data and the generation of output data to some extent. This input data processing and output data generation may be implemented in hardware or software. For example, specific electronic components may be employed in a direct injection semiconductor memory device or similar or related circuitry for implementing the functions associated with providing a direct injection semiconductor memory device in accordance with the present disclosure as described above. Alternatively, one or more processors operating in accordance with instructions may implement the functions associated with providing a direct injection semiconductor memory device in accordance with the present disclosure as described above. If such is the case, it is within the scope of the present disclosure that such instructions may be stored on one or more processor readable media (e.g., a magnetic disk or other storage medium), or transmitted to one or more processors via one or more signals embodied in one or more carrier waves.

The present disclosure is not to be limited in scope by the specific embodiments described herein. Indeed, other various embodiments of and modifications to the present disclosure, in addition to those described herein, will be apparent to those of ordinary skill in the art from the foregoing description and accompanying drawings. Thus, such other embodiments and modifications are intended to fall within the scope of the present disclosure. Further, although the present disclosure has been described herein in the context of a particular implementation in a particular environment for a particular purpose, those of ordinary skill in the art will recognize that its usefulness is not limited thereto and that the present disclosure may be beneficially implemented in any number of environments for any number of purposes. Accordingly, the claims set forth below should be construed in view of the full breadth and spirit of the present disclosure as described herein. 

1. A semiconductor memory device comprising: a memory cell comprising: a first region coupled to a bit line; a second region coupled to a source line; a body region spaced apart from and capacitively coupled to a word line, wherein the body region is electrically floating and disposed between the first region and the second region; and a third region coupled to a carrier injection line configured to inject charges into the body region through the second region; data write and sense circuitry that biases the memory cell by applying a first non-negative voltage potential to the first region via the bit line; and memory cell selection and control circuitry that biases the memory cell by applying a second non-negative voltage potential to the second region via the source line, applying a third voltage potential to the word line, and applying a fourth positive voltage potential to the third region via the carrier injection line.
 2. The semiconductor memory device of claim 1, wherein the memory cell selection and control circuitry increases the third voltage potential applied to the word line from a value applied to the word line during a hold operation to a value applied to perform a read operation.
 3. The semiconductor memory device of claim 2, wherein the memory cell selection and control circuitry increases the second non-negative voltage potential applied to the second region from a value applied during the hold operation to a value applied to perform the read operation.
 4. The semiconductor memory device of claim 2, wherein the data write and sense circuitry increases the first non-negative voltage potential applied to the first region from a value applied during the hold operation to a value applied to reduce a disturbance during the read operation.
 5. The semiconductor memory device of claim 1, wherein the memory cell selection and control circuitry increases the second non-negative voltage potential applied to the second region from a value applied during a hold operation to a value applied to perform a preparation to start operation.
 6. The semiconductor memory device of claim 1, wherein the memory cell selection and control circuitry decreases the second non-negative voltage potential applied to the second region from a value applied during a hold operation to a value applied to perform a write logic high operation.
 7. The semiconductor memory device of claim 6, wherein the memory cell selection and control circuitry increases the third voltage potential applied to the word line from a value applied during the hold operation to a value applied to perform the write logic high operation.
 8. The semiconductor memory device of claim 6, wherein the data write and sense circuitry maintains the first non-negative voltage potential applied to the first region at a value that is applied to perform both the hold operation and the write logic high operation.
 9. The semiconductor memory device of claim 1, wherein the memory cell selection and control circuitry increases the third voltage potential applied to the word line from a value applied during a hold operation to a value applied to perform a write logic low operation.
 10. The semiconductor memory device of claim 9, wherein the memory cell selection and control circuitry increases the second non-negative voltage potential applied to the second region from a value applied during the hold operation to a value applied to perform the write logic low operation.
 11. The semiconductor memory device of claim 9, wherein the data write and sense circuitry maintains the first non-negative voltage potential applied to the first region at a value that is applied to perform both the hold operation and the write logic low operation.
 12. The semiconductor memory device of claim 9, wherein the data write and sense circuitry increase the first non-negative voltage potential applied to the first region during the write logic low operation from a value applied during the hold operation to maintain a logic high stored in the memory cell.
 13. A semiconductor memory device comprising: a first region coupled to a bit line; a second region coupled to a source line; a body region spaced apart from and capacitively coupled to a word line, wherein the body region is electrically floating and disposed between the first region and the second region; and a third region coupled to a carrier injection line configured to inject charges into the body region through the second region; wherein the semiconductor memory device is biased by applying a first non-negative voltage potential to the first region via the bit line, applying a second non-negative voltage potential to the second region via the source line, applying a third voltage potential to the word line, and applying a fourth positive voltage potential to the third region via the carrier injection line.
 14. The semiconductor memory device of claim 13, wherein the third voltage potential applied to the word line is increased from a value applied during a hold operation to a value applied to perform a read operation.
 15. The semiconductor memory device of claim 14, wherein the second voltage potential applied to the second region is increased from a value applied during the hold operation to a value applied to perform the read operation.
 16. The semiconductor memory device of claim 14, wherein the first voltage potential applied to the first region is decreased from a value applied during the hold operation to a value applied to perform the read operation.
 17. The semiconductor memory device of claim 13, wherein the first voltage potential applied to the first region is decreased from a value applied during a hold operation to a value applied to perform a preparation to start operation.
 18. The semiconductor memory device of claim 17, wherein the second voltage potential applied to the second region is increased from a value applied during the hold operation to a value applied to perform the preparation to start operation.
 19. The semiconductor memory device of claim 13, wherein the second voltage potential applied to the second region is decreased from a value applied during a hold operation to a value applied to perform a write logic high operation.
 20. The semiconductor memory device of claim 19, wherein the third voltage potential applied to the word line is increased from a value applied during the hold operation to a value applied to perform the write logic high operation.
 21. The semiconductor memory device of claim 19, wherein the first voltage potential applied to the first region is increased from a value applied during a read operation to a value applied to perform the write logic high operation.
 22. The semiconductor memory device of claim 13, wherein the third voltage potential applied to the word line is increased from a value applied during a hold operation to a value applied to perform a write logic low operation.
 23. The semiconductor memory device of claim 22, wherein the second voltage potential applied to the second region is increased from a value applied during the hold operation to a value applied to perform the write logic low operation.
 24. The semiconductor memory device of claim 22, wherein the first voltage potential applied to the first region is decreased from a value applied during the hold operation to a value applied to perform the write logic low operation.
 25. The semiconductor memory device of claim 22, wherein the first non-negative voltage potential applied to the first region is increased from a value applied during the hold operation to maintain a logic high stored in the memory cell. 